MCC 224
MCD 224
Symbol
Conditions
Characteristic Values
typ.
max.
800
I RRM , I DRM
V T
V R / V D = V RRM / V DRM
I T = 600 A
T VJ = T VJM
T VJ = 25°C
40
1.4
mA
V
600
V T0
r t
V GT
I GT
For power-loss calculations only
V D = 6 V
V D = 6 V
T VJ = T VJM
T VJ = 25°C
T VJ = -40°C
T VJ = 25°C
T VJ = -40°C
0.8
0.76
2
3
150
220
V
m W
V
V
mA
mA
I T / F
[A]
400
200
T VJ = 125°C
V D = / 3 V DRM ;
V GD
I GD
I L
2
t p = 30 μs; V D = 6 V
I G = 0.45 A; di G /dt = 0.45 A/μs
T VJ = T VJM
T VJ = 25°C
0.25
10
200
V
mA
mA
0
0.0
0.4
T VJ = 25°C
0.8 1.2
V T / F [V]
1.6
2.0
I H
V D = 6 V; R GK = ∞ ;
T VJ = 25°C
150
mA
Fig. 1 Forward characteristics
t gd
t q
V D = ?V DRM
I G = 1 A; di G /dt = 1 A/μs
V D = 2 / 3 V DRM
dv/dt = 50 V/μs; -di/dt = 10 A/μs
T VJ = 25°C
T VJ = T VJM
200
2
μs
μs
10
1: I GT , T VJ = 130°C
2: I GT , T VJ = 25°C
3: I GT , T VJ = -40°C
I T = 300 A; V R = 100 V; t p = 200 μs
Q S
I RM
R thJC
I T = 300 A; -di/dt = 50 A/μs
per thyristor; DC current
per module
T VJ = T VJM
760
275
0.139
0.069
μC
A
K/W
K/W
V G
[V]
1
1
2
3
4
5
6
R thJK
d S
d A
a
per thyristor; DC current
per module
Creeping distance on surface
Creepage distance in air
Maximum allowable acceleratio n
0.179
0.089
12.7
9.6
50
K/W
K/W
mm
mm
m/s 2
0.1
10 -3
I GD , T VJ = 130°C
10 -2 10 -1
4: P GM = 20 W
5: P GM = 60 W
6: P GM = 120 W
10 0 10 1 10 2
I G [A]
Fig. 2 Gate trigger characteristics
100
10
t gd
[μs]
1
typ.
limit
T VJ = 25°C
0.1
0.01
0.1
100
I G [A]
1000
10000
Fig. 3 Gate trigger delay time
IXYS reserves the right to change limits, test conditions and dimensions.
? 2013 IXYS All rights reserved
20130813f
2-4
相关PDF资料
MCC250-16IO1 MOD THYRISTOR DUAL 1600V Y2-DCB
MCC72-18IO1B MOD THYRISTOR DUAL 1800V TO240AA
MCC95-18IO1B MOD THYRISTOR DUAL 1800V TO240AA
MCD310-22IO1 MOD THYRISTOR/DIODE 2200V Y2-DCB
MD-1962 BOX FUTURA SMALL METAL 8"X16"X9"
MD2721 SWITCH PLUNGER ASSMBLY
MD3211Q5 SWITCH WHEEL PLUNGER ASSMBLY
MDA3711Q SWITCH WHEEL PLUNGER ASSMBLY
相关代理商/技术参数
MCC224-24io1 功能描述:SCR模块 Thyristor Module RoHS:否 制造商:Vishay Semiconductors 开启状态 RMS 电流 (It RMS):260 A 不重复通态电流:4000 A 最大转折电流 IBO:4200 A 额定重复关闭状态电压 VDRM:1.6 kV 关闭状态漏泄电流(在 VDRM IDRM 下):20 mA 开启状态电压:1.43 V 保持电流(Ih 最大值): 栅触发电压 (Vgt): 栅触发电流 (Igt): 最大工作温度:+ 150 C 安装风格:Chassis 封装 / 箱体:INT-A-PAK
MCC225 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:Thyristor Modules Thyristor/Diode Modules
MCC225/12 制造商:n/a 功能描述:Power Module
MCC225-12io1 功能描述:分立半导体模块 225 Amps 1200V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装:
MCC225-14io1 功能描述:分立半导体模块 225 Amps 1400V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装:
MCC225-16io1 功能描述:分立半导体模块 225 Amps 1600V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装:
MCC225-18io1 功能描述:分立半导体模块 225 Amps 1800V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装:
MCC240M10 制造商:Thomas & Betts 功能描述:METRIC CONNECTOR 240SQMM M10 STUD